DocumentCode :
1951057
Title :
The angle control within a wafer in high-energy implanter of batch type
Author :
Kawasaki, Y. ; Yamashita, T. ; Kitazawa, M. ; Kuroi, T. ; Ohno, Y. ; Yoneda, M.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan
fYear :
2002
fDate :
2-3 Dec. 2002
Firstpage :
15
Lastpage :
17
Abstract :
For the purpose to reduce the angle deviation within a wafer in conventional batch implanter, the optimization of disk position based on the calculation and the usage of disk the 2/spl deg/ cone angle were investigated. By these effects, we performed to improve the uniformity of sheet resistance within a wafer implanted at small beam incident angle.
Keywords :
ULSI; electric resistance; ion implantation; optimisation; shrinkage; angle control; angle deviation; batch implanter; cone angle; disk position; energy implanter; optimization; sheet resistance; small beam incident angle; wafer; Annealing; Boron; Electrical resistance measurement; Implants; Large scale integration; Physics; Probes; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
Type :
conf
DOI :
10.1109/IWJT.2002.1225189
Filename :
1225189
Link To Document :
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