Low-noise CMOS integrated sensing electronics for capacitive MEMS strain sensors

Author

Suster, Michael ; Guo, Jun ; Chaimanonart, Nattapon ; Ko, Wen H. ; Young, Darrin J.

Author_Institution

Dept. of Electr. Eng and Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA

fYear

2004

fDate

3-6 Oct. 2004

Firstpage

693

Lastpage

696

Abstract

This paper describes a high-performance strain sensing microsystem. A MEMS capacitive strain sensor converts an input strain to a capacitance change with a sensitivity of 26.5 aF per 0.1 με. Low-noise integrated sensing electronics, employing a continuous time synchronous detection architecture, convert the capacitive signal to an output voltage for further signal processing. The prototype microsystem achieves a minimum detectable strain of 0.09 με over a 10 kHz bandwidth with a dynamic range of 81 dB. The sensing electronics consume 1.5 mA from a 3 V supply.

Keywords

CMOS integrated circuits; capacitive sensors; microsensors; signal processing equipment; strain sensors; 1.5 mA; 10 kHz; 3 V; capacitive MEMS strain sensors; continuous time synchronous detection architecture; low-noise CMOS integrated sensing electronics; minimum detectable strain; strain sensing microsystem; Bandwidth; Capacitive sensors; Dynamic range; Electrodes; Fingers; Mechanical sensors; Micromechanical devices; Sensor systems; Sensor systems and applications; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004

Print_ISBN

0-7803-8495-4

Type

conf

DOI

10.1109/CICC.2004.1358922

Filename

1358922