DocumentCode :
1951142
Title :
A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor
Author :
Linten, D. ; Sun, X. ; Carchon, G. ; Jeamsaksiri, W. ; Mercha, A. ; Ramos, J. ; Jenei, S. ; Aspemyr, L. ; Scholten, A.J. ; Wambacq, P. ; Decoutere, S. ; Donnay, S. ; De Raedt, W.
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2004
fDate :
3-6 Oct. 2004
Firstpage :
701
Lastpage :
704
Abstract :
A novel low-power 90 nm CMOS 5.8 GHz voltage-controlled oscillator, using a high quality thin-film post-processed inductor, is presented. This 5.8 GHz VCO has a power consumption of 328 μW with a supply voltage of 0.82 V, and a phase noise of -115 dBc/Hz at 1 MHz offset over a 148 MHz tuning range. To the authors´ knowledge, this VCO is the lowest power dissipated 5 GHz CMOS VCO reported.
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; Q-factor; circuit tuning; low-power electronics; phase noise; thin film inductors; voltage-controlled oscillators; 0.82 V; 328 muW; 5 GHz; 5.8 GHz; 90 nm; high-quality thin-film post-processed inductor; low-power CMOS VCO; phase noise; tuning range; voltage-controlled oscillator; CMOS process; CMOS technology; Dielectric substrates; Energy consumption; Phase noise; Radio frequency; Thin film inductors; Voltage; Voltage-controlled oscillators; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004
Print_ISBN :
0-7803-8495-4
Type :
conf
DOI :
10.1109/CICC.2004.1358924
Filename :
1358924
Link To Document :
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