Title :
Impact of pre-amorphization for the reduction of contact resistance using laser thermal process
Author :
Yamamoto, T. ; Goto, K. ; Kubo, T. ; Wang, Y. ; Lin, T. ; Talwar, S. ; Kase, M. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Tokyo, Japan
Abstract :
In this paper, for the first time, we report the effect of pre-amorphization for the reduction of contact resistance of CoSi/sub 2/-Si using Laser Thermal Process (LTP). Owing to the lower melting point of pre-amorphized Si, we can achieve much lower contact resistance in the lower laser power conditions. And the larger junction leakage current and junction capacitance can be much reduced by combining pre-doping and pre-RTA technique with LTP.
Keywords :
amorphisation; cobalt compounds; contact resistance; elemental semiconductors; laser materials processing; leakage currents; melting point; rapid thermal annealing; semiconductor doping; silicon; CoSi/sub 2/-Si; CoSi/sub 2/-Si contact resistance; RTA; junction capacitance; junction leakage current; laser thermal process; melting point; pre-amorphization; Amorphous materials; Conductivity; Contact resistance; Laboratories; Leakage current; Parasitic capacitance; Power lasers; Solids; Temperature; Thermal resistance;
Conference_Titel :
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-028-3
DOI :
10.1109/IWJT.2002.1225192
