Influence of pulse duration on KrF excimer laser annealing process for ultra shallow junction formation

Ultra shallow junctions were formed using boron implantation and KrF excimer laser annealing. We found that sheet resistance and junction depth of the junction and crystal defects in the junction were affected by laser pulse duration and irradiation energy density. An ultra shallow junction of 26 nm junction depth and 350/spl Omega///spl square/ of sheet resistance without twin was obtained by the laser anneal with 55 ns pulse duration laser. We reduced the required energy density to form the ultra shallow junction by healing the Si substrate.