• DocumentCode
    1951294
  • Title

    Vacuum-silicon solid microwave diodes and triodes based on P++ -N and on tungsten cathodes

  • Author

    Koshevaya, S.V. ; Kanevsky, V.I. ; Tecpoyoti-T., M. ; Gutiérrez-D, E.A. ; Buriak, G.N. ; Chayka, V.E.

  • Author_Institution
    Nat. Inst. of Astrophys. Opt. & Electron., Puebla, Mexico
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    569
  • Abstract
    This work reports the analysis of vacuum-solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small losses of the multiplication. Additionally, the analysis of the basic parameters of these vacuum-solids microwave diodes with different types of cathodes, shows that diodes with a back voltage P++-N cathode have a wide frequency band, but an efficiency smaller than that of tungsten diodes
  • Keywords
    cathodes; elemental semiconductors; microwave diodes; silicon; triodes; vacuum microelectronics; P++-N cathode; Si; amplifier; diode; generator; millimetre range; multiplier; submillimetre range; triode; tungsten cathode; vacuum-silicon solid microwave device; Anodes; Cathodes; Computer hacking; Frequency; Microwave devices; Semiconductor diodes; Silicon; Solids; Tungsten; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.838755
  • Filename
    838755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951294