Photoluminescence and ab initio study of {311} defect nucleation in Si

Author

Tsuji, H. ; Kim, R. ; Hirose, T. ; Furuhashi, M. ; Tachi, M. ; Taniguchi, K.

Author_Institution

Dept. of Electron. & Inf. Sys., Osaka Univ., Suita Osaka, Japan

fYear

2002

fDate

2-3 Dec. 2002

Firstpage

49

Lastpage

50

Abstract

Photoluminescence (PL) study using Ar laser revealed that {311} defect-precursors exist in the samples annealed at either 620 or 670/spl deg/C after silicon implantation. The peak energy shift from 0.94 to 0.90 eV is a direct evidence of atomic structural transformation from the smaller precursor interstitial clusters to {311} defects. The atomic structure of the precursor was investigated by using the ab initio calculation program. The numerical calculation demonstrated that one of the most plausible structures for the precursors is the di-interstitial.

Keywords

ab initio calculations; annealing; elemental semiconductors; interstitials; ion implantation; nucleation; photoluminescence; silicon; solid-state phase transformations; spectral line shift; 620 degC; 670 degC; Ar laser; PL spectra; Si; ab initio calculation program; annealing; atomic structural transformation; defect nucleation; interstitial clusters; photoluminescence; silicon implantation; spectral line shift; Annealing; Argon; Atomic beams; Atomic measurements; Information systems; Integrated circuit modeling; Ion implantation; Performance evaluation; Photoluminescence; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-028-3

Type

conf

DOI

10.1109/IWJT.2002.1225200

Filename

1225200