Title :
Challenges in excimer laser lithography for 256M DRAM and beyond
Author :
Endo, M. ; Hashimoto, K. ; Yamashita, K. ; Katsuyama, A. ; Matsuo, T. ; Tani, Y. ; Sasago, M. ; Nomura, N.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
New chemically amplified positive resist and off-axis illumination technique of KrF excimer laser lithography has been developed and successfully applied to the fabrication of 0.25 mu m-rule 256M DRAM. For below 0.25 mu m pattern fabrication, ArF excimer laser lithography has been found to be very promising using newly developed chemically amplified ArF excimer laser positive resist and large field projection lens.<>
Keywords :
DRAM chips; VLSI; integrated circuit technology; laser beam applications; photolithography; 0.25 micron; 256 Mbit; DRAM; KrF; chemically amplified positive resist; excimer laser lithography; large field projection lens; off-axis illumination technique; pattern fabrication; DRAM chips; Integrated circuit fabrication; Laser applications; Photolithography; Very-large-scale integration;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307305
