Title :
Surface charging effects on etching profiles
Author :
Murakawa, S. ; Sychyi Fang ; McVittie, J.P.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
Surface charging effects on etching profiles during Si trench etching in a nonuniform plasma were studied using a SEM, a Langmuir probe and an ion lens simulator. A tilt distortion in the etching profile was found near large open etched areas. In addition, bowing was found for small feature patterns. Ion trajectory calculations showed that these profile defects were caused by the local electric field distortion from a potential difference between the charged mask surface and the Si substrate.<>
Keywords :
Langmuir probes; elemental semiconductors; masks; scanning electron microscope examination of materials; semiconductor technology; silicon; sputter etching; Langmuir probe; SEM; Si; bowing; charged mask surface; etching profiles; feature patterns; ion lens simulator; ion trajectory calculations; large open etched areas; local electric field distortion; nonuniform plasma; potential difference; profile defects; surface charging effects; tilt distortion; trench etching; Electron microscopy; Masks; Plasma measurement; Semiconductor device fabrication; Silicon; Sputter etching;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307308
