DocumentCode
1951429
Title
A sub-1 volt CMOS bandgap voltage reference based on body-driven technique
Author
Aldokhaiel, Adil ; Yamazaki, Akiko ; Ismail, Mohammed
Author_Institution
Buraydah Coll. of Technol., Saudi Arabia
fYear
2004
fDate
20-23 June 2004
Firstpage
5
Lastpage
8
Abstract
A sub-1 volt bandgap voltage reference is presented. The bandgap design utilizes the body-driven technique, which allows the bandgap voltage reference to operate at low voltages without requiring low threshold voltage devices. The technique provides larger input common-mode range, which is important in low voltage bandgap voltage reference circuits. The design features PMOS diodes to provide the negative and positive temperature coefficients. The complete design was simulated and laid out in AMI 0.6 μm CMOS process. A minimum supply voltage of 0.8 V and a maximum current of 1.1 μA were achieved. The design provides a temperature coefficient of 33 ppm/°C over a temperature range from 0 to 100°C and occupies an area of 0.05 mm2.
Keywords
CMOS integrated circuits; Zener diodes; avalanche diodes; energy gap; integrated circuit design; reference circuits; 0 to 100 degC; 0.6 micron; 0.8 V; 1 V; 1.1 muA; AMI CMOS process; CMOS bandgap voltage reference circuits; PMOS diodes; body driven technique; low voltage bandgap voltage reference circuits; negative temperature coefficient; positive temperature coefficient; Bandwidth; CMOS technology; Circuits; Diodes; Educational institutions; Low voltage; Operational amplifiers; Photonic band gap; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
Print_ISBN
0-7803-8322-2
Type
conf
DOI
10.1109/NEWCAS.2004.1358998
Filename
1358998
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