DocumentCode :
1951451
Title :
Effect of Temperature-Dependent Bipolar Gain Distribution on Seu Vulnerability of Soi Cmos Srams
Author :
Alles, Michael L. ; Massengill, Lloyd W. ; Kerns, S.E.
Author_Institution :
Vanderbilt University, Nashville, TN
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
96
Lastpage :
97
Keywords :
Capacitance; Computer simulation; Conferences; Current measurement; Frequency; Gain measurement; Radiation hardening; Random access memory; Single event upset; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664812
Filename :
664812
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1951451
بازگشت