DocumentCode
1951455
Title
Silicide technology for USJ in next technology node
Author
Suguro, K. ; Iinuma, T. ; Izuha, M. ; Ohuchi, K. ; Hokazono, A. ; Miyano, K. ; Mizushima, I.
Author_Institution
Semicond. Co., Toshiba Corp., Yokohama, Japan
fYear
2002
fDate
2-3 Dec. 2002
Firstpage
67
Lastpage
70
Abstract
Silicide technology for ultra-shallow junction in next technology node is discussed. Salicide material is changed from low resistivity refractory metal silicide to near-noble metal silicide from the view point of less consumption of Si by silicidation. The pn junction leakage for shallow S/D can be drastically improved by NiSi as compared with CoSi/sub 2/.
Keywords
MOSFET; electrical resistivity; leakage currents; nickel compounds; p-n junctions; NiSi; low resistivity refractory metal silicide; near-noble metal silicide; pn junction leakage; salicide material; shallow S/D; silicidation; silicide technology; technology node; ultra shallow junction; Conductivity; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicidation; Silicides; Space technology; Sputter etching; Sputtering; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2002. IWJT. Extended Abstracts of the Third International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-028-3
Type
conf
DOI
10.1109/IWJT.2002.1225206
Filename
1225206
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