Title :
InAlGaAs/InGaAs HBT
Author :
Miura, A. ; Yakihara, T. ; Kobayashi, S. ; Oka, S. ; Nonoyama, A. ; Fujita, T.
Author_Institution :
Dept. of Eng., Yokogawa Electr. Corp., Tokyo, Japan
Abstract :
We trial-produced InAlAs/InGaAs HBT (heterojunction bipolar transistor) and InAlGaAs/InGaAs HBT changing the base thickness from 1500 A to 4000 A. As a result, we clarified that many high energy electrons injected from the emitter reach the collector high electric field region with their high energy intact, and if the injection energy is high, those electrons deteriorate collector current saturation characteristics by generating impact ionization, not in the emitter side base region but in this high electric field region. In addition, in trial-production of InAlGaAs/InGaAs HBTs for which injection energy is restricted for the purpose of improving the collector current saturation characteristics, we obtained f/sub T/=50 GHz, although it is a rather large size device having an emitter-base junction area of 20 um/sup 2/, a base-collector junction area of 220 um/sup 2/, and a base thickness of 1500 A. Further, according to these trial-productions, we were able to propose a InAlAs/InGaAs/InP DHBT which allows near-ballistic action.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; solid-state microwave devices; 1500 to 4000 A; 50 GHz; DHBT; HBT; InAlAs-InGaAs; InAlAs-InGaAs-InP; InAlGaAs-InGaAs; base thickness; collector current saturation characteristics; collector high electric field region; heterojunction bipolar transistor; high energy electron injection; impact ionization; injection energy; near-ballistic action; Aluminum compounds; Gallium compounds; Heterojunction bipolar transistors; Impact ionization; Indium compounds; Microwave devices;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307313
