Title :
A heterojunction bipolar transistor with an epitaxially regrown emitter
Author :
Tanoue, T. ; Masuda, H. ; Washio, K. ; Nakamura, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We propose a new structure for heterojunction bipolar transistors (HBTs) suitable for scaling down and higher speed operation. For this structure, we have developed a new process technology, which is epitaxial re-growth of an emitter onto a base. An InGaAs/InAlAs HBT with an emitter epitaxially regrown on a base has been demonstrated for the first time.<>
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; HBT; InGaAs-InAlAs; emitter epitaxial regrowth; epitaxially regrown emitter; heterojunction bipolar transistor; high speed operation; process technology; Aluminum compounds; Epitaxial growth; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Semiconductor growth;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307315
