• DocumentCode
    1951562
  • Title

    An improved technology of 6H-SiC power diodes

  • Author

    Badila, M. ; Brezeanu, G. ; Dilimot, G. ; Millan, S. ; Godignon, P. ; Chante, J.P. ; Locatelli, M.L. ; Savkina, N.S. ; Lebedev, A.

  • Author_Institution
    IMT, Bucharest, Romania
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    633
  • Abstract
    An elaborated technology of SiC pn junction is proposed. A cellular structure for 6H-SiC power devices is designed and optimized. Based on a matrix structure with 0.16 mm2 cell area medium power (600 V breakdown voltage and 1 A at forward voltage of 5 V) pn diode has been fabricated and tested. The micropipes effect is eliminated
  • Keywords
    p-n junctions; power semiconductor diodes; silicon compounds; wide band gap semiconductors; 600 V; 6H-SiC power diode; SiC; cellular structure; micropipe effect; p-n junction; Anodes; Boron; Diodes; Doping; Epitaxial growth; Etching; Silicon carbide; Substrates; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.838770
  • Filename
    838770
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1951562