Abstract :
The following topics are dealt with: high performance trench MOSFETs, superconjunction devices, devices in wide band gap materials, IGBT, enhancing reliability in LDMOS, power integrated circuits, high power devices, advanced silicon carbide power devices, trench MOSFET process technology and device physics, advanced smart power process technology, new device concepts based on trench technology, lateral devices for high performance power ICs, RF LDMOSFETs, power device physics and modeling, charge compensation of superconjunction MOSFETs, materials and packaging, advances in IGBT, low voltage discrete MOSFETs and SiC devices.
Keywords :
MOSFET; insulated gate bipolar transistors; power integrated circuits; semiconductor device manufacture; semiconductor technology; silicon compounds; wide band gap semiconductors; IGBT; LDMOS; MOSFET process technology; RF LDMOSFET; SiC; device physics; insulated gate bipolar transistor; laterally diffused metal oxide semiconductor; metal oxide semiconductor field effect transistor; power integrated circuit; silicon carbide power device; smart power process technology; superconjunction MOSFET; superconjunction device; trench MOSFET; wide band gap material; Insulated gate bipolar transistors; MOSFETs; Power integrated circuits; Semiconductor device fabrication; Semiconductor device manufacture; Silicon compounds;
