Title :
A resistive-gate InAlAs/InGaAs/InP 2DEG CCD
Author :
Rossi, D.V. ; Cheng, A.-N. ; Wieder, H.H. ; Fossum, E.R.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
The first two-dimensional electron gas (2DEG) charge-coupled device (CCD) fabricated in the In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP materials system is reported. The device is implemented as a 31-stage, four-phase, resistive-gate delay line, and features an on-chip 2DEG-FET source-follower. The per-transfer efficiency is measured to be 0.995.<>
Keywords :
CCD image sensors; III-V semiconductors; aluminium compounds; delay lines; gallium arsenide; indium compounds; infrared imaging; two-dimensional electron gas; 0.995 percent; CCD imagers; III-V semiconductors; IR detectors; In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP materials system; InAlAs-InGaAs-InP; delay line; on-chip 2DEG-FET source-follower; per-transfer efficiency; resistive-gate 2DEG CCD; two-dimensional electron gas; Aluminum compounds; Charge coupled image sensors; Delay lines; Gallium compounds; Indium compounds; Infrared imaging;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307322
