Title :
Low voltage super junction MOSFET simulation and experimentation
Author :
Henson, Timothy ; Cao, Joe
Author_Institution :
Int. Rectifier, El Segundo, CA, USA
Abstract :
The application of Super Junction concepts to a low voltage power MOSFET is investigated. The body junction is modified with the addition of a high energy implant, resulting in an increased breakdown voltage. Simulations are used to quantify the relationship between dose and breakdown voltage, resulting in a predicted 35% Rds(on) reduction. This is confirmed through experiment, and a 19% reduction in Rds(on) is reported at 75V. No change in device reliability is observed. This approach provides a simple means to reduce the on resistance of low voltage MOSFETs.
Keywords :
electric resistance measurement; power MOSFET; semiconductor device breakdown; semiconductor device models; 75 V; body junction; breakdown voltage; device reliability; dose voltage; high energy implant; metal oxide semiconductor field effect transistor; on-resistance; power MOSFET; super junction MOSFET simulation; Boron; Doping; Electric breakdown; Immune system; Implants; Low voltage; MOSFET circuits; Power MOSFET; Predictive models; Rectifiers;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225225
