• DocumentCode
    1951843
  • Title

    Evaluation of quasi-hermetic packaging solutions for active microwave devices and space applications

  • Author

    Ben Naceur, W. ; Malbert, N. ; Labat, N. ; Frémont, H. ; Muraro, J.L. ; Monfraix, P.

  • Author_Institution
    IMS Lab., Univ. Bordeaux 1, Talence, France
  • fYear
    2012
  • fDate
    16-18 April 2012
  • Firstpage
    42376
  • Lastpage
    42558
  • Abstract
    A methodology is proposed to estimate the actual influence of important factors during steady-state Temperature Humidity Bias (THB) aging tests on SiN-passivated MMICs: temperature-humidity effects, bias conditions and protection by silica-filled epoxy resins dispensed by a dam-and-fill process. In this work, accelerated aging tests on microwave devices used for space applications were carried out, with or without bias. After 3000 hours of storage at 85°C/85%RH, there was no catastrophic failure. Only devices with PHEMT showed electrical degradations of some DC electrical parameters after 1000 hours of test. In another 1600 hours series of tests, bias parameter was added. Devices with PHEMT exhibited electrical breakdowns, especially under reverse biasing of the gate-source junction and before the required 1000 hours of test. The failed parts were localized by surface observation using optical and scanning electron microscopy. The failure electrical signatures were correlated by electrical simulations. In order to prepare future investigation on encapsulated devices, it was determined moisture diffusivity and content at saturation of commercial dam and fill resins. The actual protection time and the effects of bias conditions of encapsulated MMICs during THB tests were specified. These parameters can be taken into account for further analysis of the reliability of encapsulated active microwave devices for space applications.
  • Keywords
    MMIC; electronics packaging; life testing; microwave devices; SiN-passivated MMIC; accelerated aging tests; active microwave devices; dam-and-fill process; electrical breakdowns; electrical degradations; gate-source junction; quasi-hermetic packaging solutions; scanning electron microscopy; silica-filled epoxy resins; space applications; steady-state temperature humidity bias; temperature-humidity effects; Humidity; Logic gates; MESFETs; MMICs; Monitoring; PHEMTs; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
  • Conference_Location
    Cascais
  • Print_ISBN
    978-1-4673-1512-8
  • Type

    conf

  • DOI
    10.1109/ESimE.2012.6191705
  • Filename
    6191705