A technology portable analytical model for DSM CMOS inverter short-circuit power estimation

Author

Deng, Shihong ; Al-Khalili, A.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada

fYear

2004

fDate

20-23 June 2004

Firstpage

101

Lastpage

104

Abstract

In this paper, an accurate analytical model for DSM (deep sub-micron) CMOS inverter short-circuit power estimation is presented. Unlike previous works, which always require extracted or fitting parameters, the proposed model depends only on the inverter dimension and SPICE parameters. Its accuracy and portability have been validated by comparing with BSIM3v3 MOSFET model simulation results for TSMC 0.18 μm and UMC 0.13 μm CMOS technologies, and for a wide range of inverter sizes, input transition times, and capacitive loads. The relative error is less than 15% in most cases, showing very good agreement with Spectre simulation.

Keywords

CMOS integrated circuits; SPICE; integrated circuit modelling; invertors; 0.13 micron; 0.18 micron; CMOS inverter short circuit power estimation; CMOS technology; SPICE; Spectre simulation; deep submicron technology; technology portable analytical model; Analytical models; CMOS technology; Circuit simulation; Equations; Inverters; MOSFET circuits; Power engineering and energy; SPICE; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on

Print_ISBN

0-7803-8322-2

Type

conf

DOI

10.1109/NEWCAS.2004.1359030

Filename

1359030