Title :
Physical model for the diffusion of ion implanted boron and BF/sub 2/ during rapid thermal annealing
Author :
Kinoshita, H. ; Dim-Lee Kwong
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF/sub 2/ implant doses.<>
Keywords :
Monte Carlo methods; annealing; boron; boron compounds; elemental semiconductors; ion implantation; point defects; rapid thermal processing; silicon; Monte Carlo generated profiles; Si:B; Si:BF/sub 2/; extended defect model; high dose implantation; kinetic parameters; point defects; rapid thermal annealing; reaction kinetics; surface amorphization model; Annealing; Boron; Boron compounds; Ion implantation; Monte Carlo methods; Rapid thermal processing; Silicon;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307333
