High-power AlGaN/GaN HFET with a lower on-state resistance and a higher switching time for an inverter circuit

Author

Yoshida, Seikoh ; Li, Jiang ; Wada, Takahiro ; Takehara, Hironari

Author_Institution

Yokohama R&D Labs., Furukawa Electr. Co., Ltd., Yokohama, Japan

fYear

2003

fDate

14-17 April 2003

Firstpage

58

Lastpage

61

Abstract

We report on an AlGaN/GaN HFET with a much lower on-state resistance and the application of an inverter circuit using AlGaN/GaN HFETs for the first time. An AlGaN/GaN HFET was fabricated. We confirmed that the AlGaN/GaN HFET was operated at a current of over 20 A using gas-source molecular-beam epitaxy. The on-state resistance of the HFET was 8 mΩ·cm² at 370 V. The switching time was investigated. As a result, the turn-on time was found to be 10 ns and the turn-off time was 11 ns. The maximum operation frequency of an AlGaN/GaN HFET was 0.37 GHz. We also fabricated an inverter circuit using AlGaN/GaN HFETs. Using this inverter, DC 30 V was converted to AC 100 V.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; invertors; junction gate field effect transistors; power field effect transistors; semiconductor device manufacture; semiconductor heterojunctions; wide band gap semiconductors; 0.37 GHz; 10 ns; 11 ns; 20 A; 370 V; AlGaN; GaN; HFET; gas-source molecular-beam epitaxy; heterojunction field effect transistor; inverter circuit; on-state resistance; operation frequency; switching time; turn-on time; Aluminum gallium nitride; Electric resistance; Electron mobility; Etching; FETs; Gallium nitride; HEMTs; Inverters; MODFETs; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225230

Filename

1225230