Design of high-speed gates based on heterostructural technology

Author

Tchakhnakia, Z. ; Sikmashvili, Iraklii ; Didebashvili, G. ; Melkadze, Revaz

Author_Institution

Electron. Technol., Tbilisi State Univ., Georgia

Volume

2

fYear

2000

fDate

2000

Firstpage

733

Abstract

The design technique of digital integrated circuits on BFL gates is represented on the basis of an AlGaAs/GaAs heterostructure. The high electron mobility transistor (HEMT) is simulated and the basic architecture and electrophysical parameters of the heterostructure are defined. Experimental samples of the HEMT (with gate length 0.8 μm) on AlGaAs/GaAs heterostructures, manufactured by MBE, are in good agreement with the simulated transistor and the discrepancy does not exceed 10%

Keywords

HEMT integrated circuits; III-V semiconductors; SPICE; aluminium compounds; field effect logic circuits; gallium arsenide; high-speed integrated circuits; integrated circuit design; logic gates; 0.8 micron; 2DEG; AlGaAs-GaAs; AlGaAs/GaAs heterostructure; BFL gates; I-V characteristics; MBE; SPICE; depletion HEMT; digital integrated circuits; electrophysical parameters; high electron mobility transistor; high-speed gate design; ring oscillator; selectively doped heterostructure; simulated transistor; Contact resistance; Delay effects; Digital integrated circuits; Gallium arsenide; HEMTs; Integrated circuit modeling; Manufacturing; Molecular beam epitaxial growth; SPICE; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2000. Proceedings. 2000 22nd International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-5235-1

Type

conf

DOI

10.1109/ICMEL.2000.838794

Filename

838794