New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter

Author

Matsudai, Tomoko ; Tsukuda, Masanori ; Umekawa, Shinichi ; Tanaka, Masahiro ; Nakagawa, Akio

Author_Institution

Discrete Semicond. Div., Toshiba Corp., Kawasaki, Japan

fYear

2003

fDate

14-17 April 2003

Firstpage

75

Lastpage

78

Abstract

We propose 600V new thin wafer PT (Punch Through) IGBT having a new concept of anode design. This proposed PT-IGBT has a very low dose p-type layer, called p-buffer, between a transparent p-emitter (anode) and an n-buffer layer. This provides a practical design for easy fabrication without deteriorating the good feature of the thin wafer PT-IGBTs. The n-buffer dose and the p-emitter dose can be precisely controlled by the doses of the two ion implantations. This is great merit in precise control of the p-emitter injection efficiency. An oscillation in the turn-off waveforms also disappears for the proposed PT-IGBT with p-buffer layer, because a smooth turn-off is achieved by a small tail current. The total power loss is not affected by the small tail loss.

Keywords

insulated gate bipolar transistors; ion implantation; semiconductor device manufacture; semiconductor device models; semiconductor doping; 600 V; anode design; ion implantation; n-buffer dose; n-buffer layer; p-buffer; p-emitter dose; p-emitter injection; p-type layer; power loss; punch through insulated gate bipolar transistor; smooth turn-off; tail current; tail loss; thin wafer PT-IGBT; turn-off waveform; Anodes; Cathodes; Electric variables; Electrical resistance measurement; Fabrication; Impurities; Insulated gate bipolar transistors; Ion implantation; Tail; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225234

Filename

1225234