DocumentCode :
1952045
Title :
Hydrogen Induced Positive Charging of Buried SiO/sub 2/
Author :
Stesmans, A. ; Vanheusden, K.
Author_Institution :
Department of Physics, Katholieke Universiteit Leuven, Belgium
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
102
Lastpage :
103
Keywords :
Annealing; Capacitance-voltage characteristics; Chemical vapor deposition; Hydrogen; Kinetic theory; Paramagnetic resonance; Physics; Signal analysis; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664815
Filename :
664815
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1952045
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