• DocumentCode
    1952175
  • Title

    On-chip signaling for ultra low-voltage 0.13 μm CMOS SOI technology

  • Author

    Valentian, Alexandre ; Amara, Amara

  • Author_Institution
    Inst. Superieur d´´Electron., Paris, France
  • fYear
    2004
  • fDate
    20-23 June 2004
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    This paper presents a current-mode signaling technique in an ultra low-voltage environment. At power supply voltage VDD below 500 mV, the CMOS gate delay is dominant with regard to the delay in the interconnect. Thus, buffering techniques using inverter chains are not efficient, especially for high data rates. In this paper, we reevaluate the benefits of current sensing for ULV applications and present a new auto-regulated current sensing scheme (ARCS), which allows power savings of more than 55% on a 2 pF interconnect for high data rate signals at almost no performance penalty, comparing to voltage mode signaling. The ARCS scheme has been implemented in a 130 nm partially depleted SOI technology.
  • Keywords
    CMOS integrated circuits; current-mode circuits; delay circuits; elemental semiconductors; integrated circuit interconnections; low-power electronics; silicon-on-insulator; system-on-chip; 0.13 micron; 130 nm; 2 pF; CMOS SOI technology; CMOS gate delay; Si; autoregulated current sensing method; circuit interconnections; current mode signaling technique; high data rate signals; partially depleted SOI technology; system-on-chip signaling; ultra low voltage environment; CMOS technology; Delay; Immune system; Impedance; Integrated circuit interconnections; Inverters; Power system interconnection; RLC circuits; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
  • Print_ISBN
    0-7803-8322-2
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2004.1359049
  • Filename
    1359049