A 50 V smart power process with dielectric isolation by SIMOX

Author

Weyers, J. ; Vogt, H.

Author_Institution

Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

225

Lastpage

228

Abstract

A new process has been developed which provides dielectrically isolated power and low voltage devices by means of rather standard VLSI CMOS technology. Isolation is obtained by SIMOX and trenches. For Smart Power applications this process allows the manufacturing of 50 V vertical DMOS transistors (VDMOS) together with 50 V dielectrically isolated quasivertical DMOS transistors (QVDMOS). For control circuit design CMOS, high voltage PMOS transistors (HVPMOS), NPN transistors, JFETs, Zener and Schottky diodes are available on the same chip. Thus, the designer has at hand a wide range of devices which allows an optimum solution for many circuit applications.<>

Keywords

CMOS integrated circuits; SIMOX; VLSI; integrated circuit technology; power integrated circuits; 50 V; HVPMOS; JFETs; NPN transistors; QVDMOS; SIMOX; Schottky diodes; VDMOS; Zener diodes; circuit applications; dielectric isolation; high voltage PMOS transistors; low voltage devices; quasivertical DMOS transistors; smart power process; standard VLSI CMOS technology; trenches; vertical DMOS transistors; CMOS integrated circuits; Integrated circuit fabrication; Power integrated circuits; SIMOX; Very-large-scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307347

Filename

307347