DocumentCode :
1952217
Title :
A 50 V smart power process with dielectric isolation by SIMOX
Author :
Weyers, J. ; Vogt, H.
Author_Institution :
Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
fYear :
1992
fDate :
13-16 Dec. 1992
Firstpage :
225
Lastpage :
228
Abstract :
A new process has been developed which provides dielectrically isolated power and low voltage devices by means of rather standard VLSI CMOS technology. Isolation is obtained by SIMOX and trenches. For Smart Power applications this process allows the manufacturing of 50 V vertical DMOS transistors (VDMOS) together with 50 V dielectrically isolated quasivertical DMOS transistors (QVDMOS). For control circuit design CMOS, high voltage PMOS transistors (HVPMOS), NPN transistors, JFETs, Zener and Schottky diodes are available on the same chip. Thus, the designer has at hand a wide range of devices which allows an optimum solution for many circuit applications.<>
Keywords :
CMOS integrated circuits; SIMOX; VLSI; integrated circuit technology; power integrated circuits; 50 V; HVPMOS; JFETs; NPN transistors; QVDMOS; SIMOX; Schottky diodes; VDMOS; Zener diodes; circuit applications; dielectric isolation; high voltage PMOS transistors; low voltage devices; quasivertical DMOS transistors; smart power process; standard VLSI CMOS technology; trenches; vertical DMOS transistors; CMOS integrated circuits; Integrated circuit fabrication; Power integrated circuits; SIMOX; Very-large-scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1992.307347
Filename :
307347
Link To Document :
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