Polycrystalline-silicon thin-film transistor technology for low cost, high-power integrated circuits

Author

Dolny, G.M. ; Ipri, A.C. ; Nostrand, G.E. ; Wheatley, C.F. ; Wodarczyk, P.J.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

233

Lastpage

236

Abstract

The feasibility of fabricating power ICs by integrating CMOS logic and control elements formed from polycrystalline-silicon thin-film transistors (TFTs) on the field oxide of single-crystal, vertical-current flow, power devices is described. Complete, dielectric, isolation between the TFT control elements and the power output device is thus provided in a simple, low-cost process. The device and circuit characteristics of the integrated TFT/vertical power devices are described. Functional power ICs using this technology are demonstrated.<>

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit technology; power integrated circuits; silicon; thin film transistors; CMOS logic; Si; control elements; dielectric isolation; field oxide; high-power integrated circuits; polycrystalline-silicon thin-film transistor technology; power ICs; power output device; vertical-current flow; CMOS integrated circuits; Integrated circuit fabrication; Power integrated circuits; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307349

Filename

307349