• DocumentCode
    1952284
  • Title

    13-kV rectifiers: studies on diodes and asymmetric thyristors

  • Author

    Niedernostheide, F.-J. ; Schulze, H.-J. ; Kellner-Werdehausen, U. ; Barthelmess, R. ; Przybilla, J. ; Keller, R. ; Schoof, H. ; Pikorz, D.

  • Author_Institution
    Infineon AG, Munich, Germany
  • fYear
    2003
  • fDate
    14-17 April 2003
  • Firstpage
    122
  • Lastpage
    125
  • Abstract
    For rectifiers with high blocking voltages, the application of field stop layers reduces power losses. Preliminary experimental results are presented from asymmetric 13-kV thyristor samples based on a conventional field stop concept. By connecting a 13-kV diode in series to this asymmetric thyristor, a symmetrically-blocking tandem device can be built. Numerical studies show that the turn-off behavior of the 13-kV diode required for the tandem solution can be significantly improved by a new field stop concept based on an n layer buried in the weakly-doped region of the p+-n--n+ power diode.
  • Keywords
    power semiconductor diodes; solid-state rectifiers; thyristors; 13 kV; asymmetric thyristor; conventional field stop concept; field stop layer; high blocking voltage; power diode; power loss; symmetrically-blocking tandem device; turn-off behavior; weakly-doped region; Anodes; Boron; Capacitors; Cathodes; Diodes; Doping profiles; Rectifiers; Temperature; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
  • Print_ISBN
    0-7803-7876-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2003.1225245
  • Filename
    1225245