DocumentCode
1952289
Title
An optimized RESURF LDMOS power device module compatible with advanced logic processes
Author
Efland, T. ; Malhi, S. ; Bailey, W. ; Oh Kyong Kwon ; Wai Tung Ng ; Torreno, M. ; Keller, S.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
237
Lastpage
240
Abstract
An advanced optimized RESURF LDMOS device intended for use in low side applications and suitable for integration into advanced CMOS and BiCMOS processes is described. Devices with 84 V and 97 V breakdown voltages have been modeled and fabricated with excellent specific on-resistance performance at CMOS level gate drives. Specific on-resistance of 2.0 m Omega .cm/sup 2/ at 97 V represents the best performance in this voltage class.<>
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; integrated logic circuits; metal-insulator-semiconductor devices; power electronics; 84 V; 97 V; BiCMOS; CMOS; advanced logic processes; breakdown voltages; gate drives; low side applications; optimized RESURF LDMOS power device; specific on-resistance performance; BiCMOS integrated circuits; CMOS integrated circuits; MIS devices; Power electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307350
Filename
307350
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