DocumentCode
1952299
Title
IGBT mode turn-off thyristor (IGTT) fabricated on SOI substrate
Author
Ogura, T. ; Nakagawa, A.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
241
Lastpage
244
Abstract
A new lateral MOS-gated thyristor, called an IGBT mode turn-off thyristor (IGTT), fabricated on an SOI substrate is proposed. A maximum turn-off current of more than 150 A/cm/sup 2/, which is 10 times larger than that of a conventional MOS-gated thyristor, has been realized. A homogeneous current distribution at the turn-off stage and a low shorting resistance between the p-base layer and the cathode attained by the IGTT are assumed to increase the maximum turn-off capability. The forward voltage drop in the IGTT is much smaller than that of an IGBT with an approximately equivalent turn-off time.<>
Keywords
insulated gate bipolar transistors; power electronics; semiconductor-insulator boundaries; thyristors; IGBT mode turn-off thyristor; IGTT; SOI substrate; forward voltage drop; homogeneous current distribution; lateral MOS-gated thyristor; shorting resistance; turn-off current; Insulated gate bipolar transistors; Power electronics; Semiconductor-insulator interfaces; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307351
Filename
307351
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