Title :
4H-SiC high power SIJFET module
Author :
Sugawara, Y. ; Takayama, D. ; Asano, Katsunori ; Ryu, S. ; Miyauchi, A. ; Ogata, S. ; Hayashi, Teruaki
Author_Institution :
Generall R & D Center, Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
5kV high power full SiC module technology was developed and 1.6kV 40A SIJFET module was fabricated for the first time, which is the pressure contact flat package type and includes four 6mm × 6mm SiC SIJFETs in addition to one 6mm × 6mm SiC fly wheeling pn diode. SiC SIJFET operates as the bipolar transistor and its current gain ranges from 20 to 4000. Its turn-on time and turn-off time are 360ns and 109 ns respectively. Since the SIJFET module has not only high current gains but also high switching speeds, it is suitable for the low loss power conversion circuits.
Keywords :
junction gate field effect transistors; power conversion; power field effect transistors; silicon compounds; wide band gap semiconductors; 1.6 kV; 109 ns; 360 ns; 40 A; 4H-SiC high power SIJFET module; 5 V; 6 mm; SiC; SiC module technology; bipolar transistor; current gain; fly wheeling pn diode; high switching speed; low loss power conversion circuit; pressure contact flat package type; turn-off time; turn-on time; Ceramics; Copper alloys; Electrodes; Packaging; Power semiconductor switches; Research and development; Semiconductor diodes; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225246
