DocumentCode
1952331
Title
The bilateral emitter switched thyristor (BEST)
Author
Huang, J.S.T.
Author_Institution
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
249
Lastpage
252
Abstract
A new AC symmetric power device structure, called the bilateral emitter switched thyristor (BEST) is described. The use of concentric geometries for unit cells results in a compact and area efficient design. The symmetry of the device provides an additional MOS gate to facilitate turn-offs and to extend the controllable current range. The measured turn-off time is less than one microsecond.<>
Keywords
insulated gate field effect transistors; power electronics; thyristors; AC symmetric power device structure; BEST; MOS gate; area efficient design; bilateral emitter switched thyristor; concentric geometries; controllable current range; turn-off time; Insulated gate FETs; Power electronics; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307353
Filename
307353
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