A high-C capacitor (20.4 fF/ mu m/sup 2/) with ultrathin CVD-Ta/sub 2/O/sub 5/ films deposited on rugged poly-Si for high density DRAMs

Author

Fazan, P.C. ; Mathews, V.K. ; Sandler ; Lo, G.Q. ; Kwong, D.L.

Author_Institution

Micron Semicond. Inc., Boise, ID, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

263

Lastpage

266

Abstract

Storage capacitors integrating ultrathin chemical vapor deposited-Ta/sub 2/O/sub 5/ (10 to 15 nm thick) on rapid thermal nitrided rugged polycrystalline silicon electrodes are proposed for 256 Mb stacked dynamic random access memory applications. The unique combination of this high dielectric constant material with a rugged hemispherical grain silicon electrode allows the manufacture of the ultra high capacitance (20.4 fF/ mu m/sup 2/) stacked structures needed beyond 64 Mb.<>

Keywords

CVD coatings; DRAM chips; dielectric thin films; elemental semiconductors; permittivity; rapid thermal processing; silicon; tantalum compounds; 256 Mbit; Si-Ta/sub 2/O/sub 5/; dielectric constant; hemispherical grain silicon; high density DRAMs; polycrystalline silicon electrodes; rapid thermal nitridation; stacked dynamic random access memory; stacked structures; storage capacitors; ultrathin CVD films; CVD; Coatings; DRAM chips; Dielectric films; Permittivity; Rapid thermal processing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307356

Filename

307356