• DocumentCode
    1952377
  • Title

    Design guidelines for leakage control transistor

  • Author

    Farbiz, F. ; Emadi, M. ; Foruzandeh, B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Tehran Univ., Iran
  • fYear
    2004
  • fDate
    23-23 June 2004
  • Firstpage
    209
  • Lastpage
    212
  • Abstract
    This paper investigates the effects of transistor sizing of the sleep transistor on the power consumption and speed. A method is proposed to handle the power-delay trade off and a new transistor arrangement is proposed. Simulations show how much is the appropriate size of sleep transistor with respect to the gate size. This paper deals with the effective combination of stack transistor insertion method and the input vector control technique. Sizing considerations for both the proposed and conventional methods are examined.
  • Keywords
    MOSFET; leakage currents; logic gates; logic simulation; input vector control technique; leakage control transistor design; logic gates; logic simulation; power consumption; power delay trade off; sleep transistor; stack transistor insertion method; transistor sizing effects; Batteries; Circuits; Energy consumption; Guidelines; MOS devices; Power engineering and energy; Power engineering computing; Threshold voltage; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
  • Conference_Location
    Montreal, Quebec, Canada
  • Print_ISBN
    0-7803-8322-2
  • Type

    conf

  • DOI
    10.1109/NEWCAS.2004.1359063
  • Filename
    1359063