Title :
High quality ultra thin Si/sub 3/N/sub 4/ film selectively deposited on poly-Si electrode by LPCVD with in situ HF vapor cleaning
Author :
Yoshimaru, M. ; Inoue, N. ; Itoh, M. ; Kurogi, H. ; Tamura, H. ; Hirasita, N. ; Ichikawa, F. ; Ino, M.
Author_Institution :
VLSI R&D Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Si/sub 3/N/sub 4/ film deposited by LPCVD with in situ HF vapor cleaning has been applied to dielectric film of stacked capacitor. The composition of the Si/sub 3/N/sub 4/ film deposited on poly-Si electrode becomes stoichiometric. The film shows low leakage current and high electrical reliability. But it brings a new problem. Si/sub 3/N/sub 4/ film deposited using in situ HF vapor cleaning shows selective deposition on poly-Si electrode. The edge of poly-Si electrode is not covered by Si/sub 3/N/sub 4/ film. This problem is avoidable by carpeting Si/sub 3/N/sub 4/ film under poly-Si electrode. This process realizes further improvement of stacked capacitor dielectric film reliability.<>
Keywords :
CVD coatings; chemical vapour deposition; dielectric thin films; elemental semiconductors; hydrogen compounds; integrated circuit technology; silicon; silicon compounds; substrates; surface treatment; DRAM stacked capacitor; LPCVD; Si; Si/sub 3/N/sub 4/; carpeting; dielectric film; electrical reliability; in situ HF vapor cleaning; leakage current; poly-Si electrode; selective deposition; stacked capacitor dielectric film reliability; stoichiometric composition; ultra thin Si/sub 3/N/sub 4/ film; CVD; Coatings; Dielectric films; Hydrogen compounds; Integrated circuit fabrication; Silicon; Silicon compounds; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307358
