Title :
Trench isolation with Del (nabla)-shaped buried oxide for 256 mega-bit DRAMs
Author :
Shibahara, K. ; Fujimoto, Y. ; Hamada, M. ; Iwao, S. ; Tokashiki, K. ; Kunio, T.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A new trench isolation with Del -shaped buried oxide is proposed. The Del -shape of the buried oxide is a key to control trench sidewall inversion which is a well known obstacle for practical application of a trench isolation. Its fabrication process is simple and has good feasibility for 256 Mb DRAM application. In addition to good isolation characteristics, low junction capacitance is an advantage for DRAM performance.<>
Keywords :
DRAM chips; MOS integrated circuits; insulating thin films; integrated circuit technology; silicon compounds; 256 Mbit; DRAM; SiO/sub 2/; SiO/sub 2/ film; fabrication; isolation characteristics; junction capacitance; n-MOS; nabla-shaped buried oxide; trench isolation; trench sidewall inversion; DRAM chips; Dielectric films; Integrated circuit fabrication; MOS integrated circuits; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307359
