Title :
Thermal performance evaluation of SiC power devices packaging
Author :
Gracia, A. ; Azzopardi, S. ; Woirgard, Eric
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
The development of power components based on silicon carbide (SiC) allows high power densities, size reduction and elevated operating temperatures (above 200 or 300°C). In this study, we present solutions for SiC device packaging base on 3D finite element simulation and experimental approach. Various test vehicles were assembled with different die attach and substrate. New materials like copper carbide (CuC) and copper diamond (Cu-diamond) were selected for base plate. Their thermal performances were evaluated through the measurement of the thermal resistance and 3D finite elements simulations.
Keywords :
finite element analysis; power semiconductor devices; semiconductor device packaging; thermal resistance; 3D finite element simulation; CuC; SiC; copper carbide; copper diamond; elevated operating temperature; power component; power device packaging; silicon carbide; size reduction; substrate; thermal performance evaluation; thermal resistance; Artificial intelligence; Copper; Heating; Materials; Metallization; Silicon carbide; Switches;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on
Conference_Location :
Cascais
Print_ISBN :
978-1-4673-1512-8
DOI :
10.1109/ESimE.2012.6191731
