Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness

Author

Laska, T. ; Miller, G. ; Pfaffenlehner, M. ; Türkes, P. ; Berger, D. ; Gutsmann, B. ; Kanschat, P. ; Münzer, M.

Author_Institution

Infineon Technol., Munich, Germany

fYear

2003

fDate

14-17 April 2003

Firstpage

152

Lastpage

155

Abstract

This paper will discuss the different principal short circuit failure modes of IGBTs focusing on the new Trench-/Field-Stop-IGBT device concept. Beside the short circuit robustness limitation regarding an over temperature destruction, a new failure mode, the so called short circuit current destruction mode, is described. Necessary design aspects for Trench-/Field-Stop devices resulting in a superior short circuit robustness at least as good as the well established Non Punch Through IGBTs - are derived and proved experimentally by extreme single (e.g. Tj=200°C!) and repetitive short circuit pulse tests (e.g. 50.000 times).

Keywords

insulated gate bipolar transistors; robust control; short-circuit currents; Trench-/Field-Stop-IGBT; short circuit current destruction mode; short circuit property; short circuit pulse test; superior robustness; Circuit testing; Current density; History; Insulated gate bipolar transistors; Power generation economics; Pulse circuits; Robustness; Short circuit currents; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225252

Filename

1225252