Title :
The reverse blocking IGBT for matrix converter with ultra-thin wafer technology
Author :
Takei, M. ; Naito, T. ; Ueno, K.
Author_Institution :
Fuji Electr. Corporate R&D, Ltd., Nagano, Japan
Abstract :
An isolation type vertical 600V-50A IGBT with reverse blocking capability (RB-IGBT) has been developed for the first time. Ultra-thin wafer technology combined with deep boron diffusion technique results in a great improvement on trade-off performance. RB-IGBT can be used as a bi-directional switch by anti-parallel connection with another RB-IGBT. These bi-directional switches realize a high efficiency matrix converter.
Keywords :
insulated gate bipolar transistors; matrix convertors; power bipolar transistors; power field effect transistors; wafer bonding; 50 A; 600 V; anti-parallel connection; bi-directional switch; deep boron diffusion technique; high efficiency matrix converter; reverse blocking IGBT; trade-off performance; ultra-thin wafer technology; Anodes; Bidirectional control; Circuits; Electrons; Insulated gate bipolar transistors; Isolation technology; Matrix converters; Semiconductor diodes; Switches; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN :
0-7803-7876-8
DOI :
10.1109/ISPSD.2003.1225253
