DocumentCode
1952511
Title
The reverse blocking IGBT for matrix converter with ultra-thin wafer technology
Author
Takei, M. ; Naito, T. ; Ueno, K.
Author_Institution
Fuji Electr. Corporate R&D, Ltd., Nagano, Japan
fYear
2003
fDate
14-17 April 2003
Firstpage
156
Lastpage
159
Abstract
An isolation type vertical 600V-50A IGBT with reverse blocking capability (RB-IGBT) has been developed for the first time. Ultra-thin wafer technology combined with deep boron diffusion technique results in a great improvement on trade-off performance. RB-IGBT can be used as a bi-directional switch by anti-parallel connection with another RB-IGBT. These bi-directional switches realize a high efficiency matrix converter.
Keywords
insulated gate bipolar transistors; matrix convertors; power bipolar transistors; power field effect transistors; wafer bonding; 50 A; 600 V; anti-parallel connection; bi-directional switch; deep boron diffusion technique; high efficiency matrix converter; reverse blocking IGBT; trade-off performance; ultra-thin wafer technology; Anodes; Bidirectional control; Circuits; Electrons; Insulated gate bipolar transistors; Isolation technology; Matrix converters; Semiconductor diodes; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
Print_ISBN
0-7803-7876-8
Type
conf
DOI
10.1109/ISPSD.2003.1225253
Filename
1225253
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