Title :
High performance heterojunction InGaAs/InP JFET grown by MOCVD using tertiarybutylphosphine (TBP)
Author :
Hashemi, M.M. ; Shealy, J.B. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
A new InP-JFET (Heterojunction JFET or HJFET) having p/sup +/ GaInAs as the gate material is proposed and fabricated. The large valence band discontinuity in In/sub .53/Ga/sub .47/As/InP interface ( Delta E/sub V/ approximately=0.37 eV) considerably suppresses hole injection into the channel in this HJFET as compared to homojunction InP-JFETs, allowing higher positive gate bias without g/sub m/ compression. Heterojunction JFETs (HJFETs) with gate length of 0.6 mu m have resulted in a unity current gain cut-off frequency (f/sub T/) and power gain cut-off frequency (f/sub max/) of 14.3 GHz and 37.5 GHz, respectively. Using a self-aligned structure a g/sub m/ and f/sub T/ as high as 230 mS/mm and 21 GHz were obtained, respectively. At 4 GHz, a maximum power density of 1.0 W/mm with power added efficiency of 40% was obtained. These results indicate that the HJFET is a preferred device for high speed logic circuits based on JFET technology.<>
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor growth; valence bands; 0.37 eV; 0.6 micron; 14.3 GHz; 21 GHz; 37.5 GHz; 40 percent; HJFET; InGaAs-InP; MOCVD; gate length; heterojunction InGaAs/InP JFET; hole injection; maximum power density; positive gate bias; power added efficiency; power gain cut-off frequency; self-aligned structure; tertiarybutylphosphine; transconductance; unity current gain cut-off frequency; valence band discontinuity; CVD; Gallium compounds; Indium compounds; JFETs; Semiconductor growth;
Conference_Titel :
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1992.307367
