0.7 micron gate length complementary Al/sub 0.75/Ga/sub 0.25/As/In/sub 0.25/Ga/sub 0.75/As/GaAs HIGFET technology for high speed/low power digital circuits

Author

Grider, D.E. ; Ruden, P.P. ; Nohava, J.C. ; Mactaggart, I.R. ; Stronczer, J.J. ; Tran, R.H.

Author_Institution

Syst. & Res. Center, Honeywell Inc., Bloomington, MN, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

331

Lastpage

334

Abstract

Results are presented from the first submicron gate length complementary heterostructure insulated gate field effect transistor (C-HIGFET) devices and circuits (n- and p-HIGFET gate lengths of 0.7 mu m). This reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switching-power/frequency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated.<>

Keywords

III-V semiconductors; SRAM chips; aluminium compounds; digital integrated circuits; field effect integrated circuits; gallium arsenide; indium compounds; insulated gate field effect transistors; 0.7 mum; 360 MHz; 4 Kbit; 4Kbit SRAM; Al/sub 0.75/Ga/sub 0.25/As-In/sub 0.25/Ga/sub 0.75/As-GaAs; AlGaAs/InGaAs/GaAs HIGFET technology; C-HIGFET; clock frequencies; drain currents; high speed/low power digital circuits; model; n-HIGFET gate; p-HIGFET gate; ring oscillators; submicron gate length; switching speed; switching-power; Aluminum compounds; Digital integrated circuits; FET integrated circuits; Gallium compounds; Indium compounds; Insulated gate FETs; SRAM chips;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307372

Filename

307372