• DocumentCode
    1952816
  • Title

    200V multi RESURF trench MOSFET (MR-TMOS)

  • Author

    Kurosaki, T. ; Shishido, H. ; Kitada, M. ; Oshima, K. ; Kunori, S. ; Sugai, A.

  • fYear
    2003
  • fDate
    14-17 April 2003
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    In this paper, we propose a new structure of trench MOSFETs, named Multi RESURF Trench MOSFETs (MR-TMOS). This structure has a deep p type pillar under the trench gate electrode. This p type pillars are formed by using the method of filling trenches with epitaxial silicon. Using this technique, we have developed a 200V class low on-resistance MOSFETs with Ron˙A=4.8 mΩ˙cm2 at VG=10V and Vdss=245V. This experimental result shows superior characteristics and a relatively good agreement with the simulation result, Ron˙A=5.0 mΩ˙cm2 at VG=10V and Vdss=252V.
  • Keywords
    elemental semiconductors; power MOSFET; semiconductor device measurement; semiconductor device models; semiconductor epitaxial layers; silicon; 10 V; 200 V; 245 V; Si; deep p type pillar; epitaxial silicon; multi RESURF trench MOSFET; trench gate electrode; Boron; Computational modeling; Consumer electronics; Electrodes; Filling; MOSFET circuits; Power MOSFET; Power semiconductor devices; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on
  • Print_ISBN
    0-7803-7876-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2003.1225266
  • Filename
    1225266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1952816