200V multi RESURF trench MOSFET (MR-TMOS)

In this paper, we propose a new structure of trench MOSFETs, named Multi RESURF Trench MOSFETs (MR-TMOS). This structure has a deep p type pillar under the trench gate electrode. This p type pillars are formed by using the method of filling trenches with epitaxial silicon. Using this technique, we have developed a 200V class low on-resistance MOSFETs with Ron˙A=4.8 mΩ˙cm² at V_G=10V and Vdss=245V. This experimental result shows superior characteristics and a relatively good agreement with the simulation result, Ron˙A=5.0 mΩ˙cm² at V_G=10V and Vdss=252V.