DocumentCode :
1952835
Title :
Measurement of Electron and Hole Saturation Velocities in Silicon Inversion Layers Using Soi Mosfets
Author :
Assaderadi, F. ; Chen, Jian ; Ko, Ping ; Hu, Chenming
Author_Institution :
Department of Electrical Engineering and Computer Sciences, UC Berkeley
fYear :
1992
fDate :
6-8 Oct. 1992
Firstpage :
112
Lastpage :
113
Keywords :
Charge carrier processes; Electric variables measurement; Electron mobility; Length measurement; MOS devices; MOSFETs; Semiconductor films; Silicon; Velocity measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1992. IEEE International
Conference_Location :
Ponte Vedra Beach, FL
ISSN :
1078-621X
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.1992.664819
Filename :
664819
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1952835
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