• DocumentCode
    1952835
  • Title

    Measurement of Electron and Hole Saturation Velocities in Silicon Inversion Layers Using Soi Mosfets

  • Author

    Assaderadi, F. ; Chen, Jian ; Ko, Ping ; Hu, Chenming

  • Author_Institution
    Department of Electrical Engineering and Computer Sciences, UC Berkeley
  • fYear
    1992
  • fDate
    6-8 Oct. 1992
  • Firstpage
    112
  • Lastpage
    113
  • Keywords
    Charge carrier processes; Electric variables measurement; Electron mobility; Length measurement; MOS devices; MOSFETs; Semiconductor films; Silicon; Velocity measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1992. IEEE International
  • Conference_Location
    Ponte Vedra Beach, FL
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.1992.664819
  • Filename
    664819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1952835