Dual Gate Lateral Inversion Layer Emitter Transistor for power and high voltage integrated circuits

Author

Udugampola, U.N.K. ; McMahon, R.A. ; Udrea, F. ; Sheng, K. ; Amaratunga, G.A.J. ; Narayanan, E.M.S. ; Hardikar, S. ; De Souza, M.M.

Author_Institution

Eng. Dept., Cambridge Univ., UK

fYear

2003

fDate

14-17 April 2003

Firstpage

216

Lastpage

219

Abstract

The Dual Gate Lateral Inversion Layer Emitter Transistor (DGLILET) is a versatile device with controlled carrier injection and ultra fast switching capability. The DGLILET has an improved trade off between the on-state and turn off losses enabling the performance of High Voltage Integrated Circuits (HVICs) to be enhanced by reducing overall losses at switching frequencies over approximately 10 kHz. This paper focuses on the use of the DGLILET in these applications and demonstrates experimental results of the fabricated devices confirming the enhanced performance.

Keywords

high-voltage techniques; insulated gate bipolar transistors; inversion layers; power integrated circuits; power transistors; controlled carrier injection; dual gate lateral inversion layer emitter transistor; enhanced performance; high voltage integrated circuit; improved trade off; switching frequency; ultra fast switching capability; Anodes; Application specific integrated circuits; Current density; Insulated gate bipolar transistors; MOSFETs; Performance loss; Power engineering and energy; Switching frequency; Switching loss; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2003. Proceedings. ISPSD '03. 2003 IEEE 15th International Symposium on

Print_ISBN

0-7803-7876-8

Type

conf

DOI

10.1109/ISPSD.2003.1225267

Filename

1225267