Field emission imaging study of silicon field emitters

Author

Jiang Liu ; Hren, J.J. ; Sune, C.T. ; Jones, G.W. ; Gray, H.F.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

371

Lastpage

374

Abstract

The behavior of electron emission from pyramid-shaped silicon field emitters has been studied by direct imaging of electron emission as well as by emission current-voltage measurement. Oxide covered silicon emitter surfaces have resulted in structureless emission patterns. The electron emitting angle is found to vary significantly with the extraction voltage or the emission current. Experimental measurement and analysis of emission images under moderate operating conditions showed that resulted final emitting angles are under 13 degrees while initial electron emitting angles from the emitter could be as high as 18 degrees .<>

Keywords

characteristics measurement; electric current measurement; elemental semiconductors; fibre optic sensors; image sensors; silicon; vacuum microelectronics; MCP; Si; Si emitter surfaces; Si field emitters; direct imaging; electron emission; electron emitting angles; emission current-voltage measurement; emission images; fibre optic imager; field emitter array; pyramid-shaped silicon field emitters; structureless emission patterns; Current measurement; Image sensors; Optical fiber transducers; Silicon; Vacuum microelectronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307380

Filename

307380