DocumentCode
1952868
Title
Complete vacuum microelectronic structures using GaAs
Author
Bandy, S. ; Nishimoto, C. ; Webb, C. ; Zdasiuk, G.
Author_Institution
Varian Ginzton Res. Center, Palo Alto, CA, USA
fYear
1992
fDate
13-16 Dec. 1992
Firstpage
375
Lastpage
378
Abstract
The particular advantages of using GaAs for the fabrication of field emitter vacuum microelectronic devices is discussed. A completely monolithic structure using GaAs for both the emitter and the gate (and/or anode) is described. Improved immunity to arc damage, ease of micro-machining complex structures and the availability of an insulating substrate are characteristics not shared by any other materials system.<>
Keywords
III-V semiconductors; electron field emission; gallium arsenide; grain boundaries; semiconductor technology; vacuum microelectronics; GaAs; arc damage immunity; fabrication; field emitter; insulating substrate; micromachining; monolithic structure; vacuum microelectronic devices; Electron emission; Gallium compounds; Semiconductor device fabrication; Vacuum microelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1992.307381
Filename
307381
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