Title :
High voltage charge pump using standard CMOS technology
Author :
Richard, Jean-François ; Savaria, Yvon
Author_Institution :
Design & Product Foundry Support Dept., DALSA Semicond. Inc., Bromont, Que., Canada
Abstract :
An integrated high voltage charge pump circuit utilising intrinsic process features is introduced. It can produce +20 V to +50 V output from a typical 5 V input. The reported charge pumps achieved the highest density and highest output voltages of the industry. Measurements show output ripples of 400 mV for frequencies around 10 MHz and output load of 28 pF. The reported integrated high voltage charge pump circuits was implemented on 0.8 μm DALSA semiconductor technology using standard CMOS devices.
Keywords :
CMOS integrated circuits; power integrated circuits; semiconductor technology; voltage multipliers; 0.8 micron; 10 MHz; 20 to 50 V; 28 pF; 400 mV; 5 V; CMOS devices; CMOS technology; DALSA semiconductor technology; high voltage charge pump circuits; integrated charge pump circuits; intrinsic process; CMOS technology; Charge pumps; Clocks; Diodes; Equations; Frequency; Integrated circuit technology; Product design; Threshold voltage; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 2004. NEWCAS 2004. The 2nd Annual IEEE Northeast Workshop on
Print_ISBN :
0-7803-8322-2
DOI :
10.1109/NEWCAS.2004.1359095
