Sub-20 psec ECL circuits with 50 GHz fmax self-aligned SiGe HBTs

Author

Sato, F. ; Hashimoto, T. ; Tatsumi, T. ; Kitahata, H. ; Tashiro, T.

Author_Institution

ULSI Device Dev. Labs., NEC Corp., Sagamihara, Japan

fYear

1992

fDate

13-16 Dec. 1992

Firstpage

397

Lastpage

400

Abstract

This paper describes a high fmax self-aligned SiGe heterojunction bipolar transistor (HBT) technology which is based on the self-aligned selective epitaxial growth technology including Ge graded profile and link-base engineering using a BSG sidewall structure. The HBT has a Super Self-aligned Selectively grown SiGe Base (SSSB) structure. Base profile design and a 2-step annealing technique have realized a f/sub T/ of 51 GHz and low sheet resistance at the link-base region, and furthermore have accomplished fmax of as high as 50 GHz. ECL circuits of 19 psec gate delay have been achieved by using this SiGe HBT technology.<>

Keywords

Ge-Si alloys; annealing; bipolar integrated circuits; emitter-coupled logic; epitaxial growth; heterojunction bipolar transistors; integrated circuit technology; integrated logic circuits; semiconductor materials; 19 to 20 ps; 2-step annealing technique; 50 GHz; B2O3-SiO2; BSG; BSG sidewall structure; ECL circuits; Ge graded profile; SiGe; SiGe HBTs; base profile design; heterojunction bipolar transistor; link-base engineering; self-aligned selective epitaxial growth technology; super self-aligned selectively grown SiGe base; Annealing; Bipolar integrated circuits; Emitter coupled logic; Epitaxial growth; Germanium alloys; Heterojunction bipolar transistors; Integrated circuit fabrication; Semiconductor materials; Silicon alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1992. IEDM '92. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1992.307386

Filename

307386