On effective IDDQ testing of low voltage CMOS circuits using leakage control techniques

The use of low threshold devices in low voltage CMOS circuits leads to an exponential increase in the intrinsic leakage current. This threatens the effectiveness of I_DDQ testing for such low voltage circuits because it is difficult to differentiate a defect-free circuit from defective circuits. Recently, several leakage control techniques have been proposed to reduce intrinsic leakage current, which may benefit I_DDQ testing. In this paper we investigate the possibilities of applying different leakage control techniques to improve the fault coverage of I_DDQ testing. Results on a large number of benchmarks indicate that dual threshold and vector control techniques are very effective in improving fault coverage for I _DDQ testing